TK4P60DB(T6RSS-Q)

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See Product Specifications

Mfr. #:

TK4P60DB(T6RSS-Q)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 600V 3.7A DPAK

Упаковка:

Tape & Reel (TR)

Datasheet:

TK4P60DB(T6RSS-Q) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK4P60DB(T6RSS-Q)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:	80d64354a61b327dac5bb386b57d261e
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	e62d7c9692cf5f83460e497292718405
Vgs(th) (Max) @ Id:	a08150ab78b1acb5838dbc11e244b833
Gate Charge (Qg) (Max) @ Vgs:	e8a30954980feb5704747c3b8f94ff10
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	97e07d8a82bc40038ccedcb20659ead4
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	c94068f0787c634f82ce5ff7f457b516
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	eea751cf5793e0f440e103a003404f48
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95