TK5R1P08QM,RQ

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Mfr. #:

TK5R1P08QM,RQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

UMOS10 DPAK 80V 5.1MOHM

Упаковка:

Tape & Reel (TR)

Datasheet:

TK5R1P08QM,RQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK5R1P08QM,RQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	ebd7aaeec2792ddf9fe1af48370ec717
Current - Continuous Drain (Id) @ 25°C:	2fe3207cc06f2aa173e2e6cc714e4db1
Drive Voltage (Max Rds On, Min Rds On):	9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:	0b21340a981be4fbe3214814bb0bcf16
Vgs(th) (Max) @ Id:	2d9b2da20b6649bb60f4719b2d5ff14b
Gate Charge (Qg) (Max) @ Vgs:	ec7ed06369aef779c1b881719a9ae5ce
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	9ac0b7cc66a84d7c0a23f7a7d0266a80
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	9911ad4440d4c4ad12abf0c7ff0a94ad
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	26e4778ee70ff342a4cdee16eb8f56f1
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95