TK60F10N1L,LXGQ

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See Product Specifications

Mfr. #:

TK60F10N1L,LXGQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 100V 60A TO220SM

Упаковка:

Tape & Reel (TR)

Datasheet:

TK60F10N1L,LXGQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK60F10N1L,LXGQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	96cd7767f38099df4a6c066b3b4a102d
Drive Voltage (Max Rds On, Min Rds On):	9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:	276b2fa8bb463eca6af826ee80593a5c
Vgs(th) (Max) @ Id:	2c65de7c887041df4691a3701243f129
Gate Charge (Qg) (Max) @ Vgs:	89853fdd6ed2eb1978d2d551614252a1
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	e08f7c942f3de3457b72a2941cb777fb
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	02d8037fa50adfe9526ef8cc18fc73c2
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	f7944d055bb3cc70853f272a8d27664f
Package / Case:	99446f4470b43888d0c78d7d2cdfc956