TK60P03M1,RQ(S

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See Product Specifications

Mfr. #:

TK60P03M1,RQ(S

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 30V 60A DPAK

Упаковка:

Tape & Reel (TR)

Datasheet:

TK60P03M1,RQ(S Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK60P03M1,RQ(S
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	96cd7767f38099df4a6c066b3b4a102d
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	b67b41f15d4561dacf79ea036bed6f0d
Vgs(th) (Max) @ Id:	78ee3a8364cd5ed3b145accadfcf4336
Gate Charge (Qg) (Max) @ Vgs:	b6ab5da133ad4bb28468094ad6d872e7
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	370de7f3b1a5d315009a09224def604e
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	c536ccddca9c99653f1af1372ed95f08
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	26e4778ee70ff342a4cdee16eb8f56f1
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95