TK6Q65W,S1Q

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Mfr. #:

TK6Q65W,S1Q

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 650V 5.8A IPAK

Упаковка:

Tube

Datasheet:

TK6Q65W,S1Q Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK6Q65W,S1Q
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:	d313291a35a1ae5ddddbebc3a94bd61d
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	541cdeff053d99a51dab839424861d4c
Vgs(th) (Max) @ Id:	1839fa6e2a39c2a154b8c6a624e02a15
Gate Charge (Qg) (Max) @ Vgs:	e8a30954980feb5704747c3b8f94ff10
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	dc12758fac92f7bbef947d010013080a
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	4d11c3d72a44f4227b1e9af62cf6d238
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	d6fc0ca06a01a70da20a6b2b00f6ba27
Package / Case:	f05f3b828db9b3466aca24456db9c84e