TK9J90E,S1E

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Mfr. #:

TK9J90E,S1E

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 900V 9A TO3P

Упаковка:

Tube

Datasheet:

TK9J90E,S1E Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TK9J90E,S1E
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	d409dc1d35f25724926a975f7246a819
Current - Continuous Drain (Id) @ 25°C:	8eb8529018c5d32af4812ca4c4cabfa9
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	243e4b150f0259d32f606cdac501bef0
Vgs(th) (Max) @ Id:	24805d75c4241f26af1748e88fcac396
Gate Charge (Qg) (Max) @ Vgs:	5789212ba6ace12ca7a418f277574048
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	ff384c8b127d60b6bd6c4c1798270b44
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	2f8fb1b958a63c9c2907182cbf2e2287
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	802becb26be6cafacf181bb527af5311
Package / Case:	a37ad9863329afbf5b7bab5645143153