TPC8109(TE12L)

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See Product Specifications

Mfr. #:

TPC8109(TE12L)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET P-CH 30V 10A 8-SOP

Упаковка:

Cut Tape (CT)

Datasheet:

TPC8109(TE12L) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPC8109(TE12L)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Cut Tape (CT)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	52494cba539840e9393c9095a1421004
Drive Voltage (Max Rds On, Min Rds On):	336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:	7634ec0f0dd39448ee971aaeb1d0eb43
Vgs(th) (Max) @ Id:	25509f2d81b84ad0de9368a2b900ad19
Gate Charge (Qg) (Max) @ Vgs:	0f6138812f9ed4814918fa97e4fa176e
Vgs (Max):	336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:	0fef63564dcaf473a8a2f93c9f6a2a76
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	336d5ebc5436534e61d16e63ddfca327
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	18462b8273698d51534a6242e89a9e0a
Package / Case:	360db61c20c455ecac5e92080f13f3cb