TPC8115(TE12L,Q,M)

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See Product Specifications

Mfr. #:

TPC8115(TE12L,Q,M)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET P-CH 20V 10A 8SOP

Упаковка:

Tape & Reel (TR)

Datasheet:

TPC8115(TE12L,Q,M) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPC8115(TE12L,Q,M)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:	52494cba539840e9393c9095a1421004
Drive Voltage (Max Rds On, Min Rds On):	72f93dd3e24aa2b695818cce6ee9270b
Rds On (Max) @ Id, Vgs:	f1d39ce8f148f69fe1f9cbf7b15ba45d
Vgs(th) (Max) @ Id:	664dffdfcdc4592b9a18cdb9881a57f8
Gate Charge (Qg) (Max) @ Vgs:	1a2e55f1dbf8d86342864187fde86ccf
Vgs (Max):	141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:	6416e741a6dc4f4856064882c9e0c739
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	4c6a955db65e87d580766aee735f1644
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	18462b8273698d51534a6242e89a9e0a
Package / Case:	360db61c20c455ecac5e92080f13f3cb