TPC8A06-H(TE12LQM)

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See Product Specifications

Mfr. #:

TPC8A06-H(TE12LQM)

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 30V 12A 8SOP

Упаковка:

Tape & Reel (TR)

Datasheet:

TPC8A06-H(TE12LQM) Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPC8A06-H(TE12LQM)
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	45a7caf307977e3e68e27161a8faf377
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	4974d23c627db7a3c5c97e4cab0cb1e8
Vgs(th) (Max) @ Id:	e27cb9a9021a7cc3970301d6fa06979f
Gate Charge (Qg) (Max) @ Vgs:	b662323f4246acd1b360f3b4faeeff60
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	9404cb923dde9d1e2e545030af37dce7
FET Feature:	7b1ab46d7cabbd4f58e57b1c5e7c658a
Power Dissipation (Max):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	336d5ebc5436534e61d16e63ddfca327
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	18462b8273698d51534a6242e89a9e0a
Package / Case:	360db61c20c455ecac5e92080f13f3cb