TPN2R503NC,L1Q

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Mfr. #:

TPN2R503NC,L1Q

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N CH 30V 40A 8TSON-ADV

Упаковка:

Tape & Reel (TR)

Datasheet:

TPN2R503NC,L1Q Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPN2R503NC,L1Q
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	e50dae7122d252f8a7317c11068ffb56
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	dbe43ce204483fa1d452458953bf7a2b
Vgs(th) (Max) @ Id:	78ee3a8364cd5ed3b145accadfcf4336
Gate Charge (Qg) (Max) @ Vgs:	b6ab5da133ad4bb28468094ad6d872e7
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	a1383c73d06e98c0799efb59c30360e4
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	451e91148b705fa6d5b38d4998b3bb52
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	bacc9fa9bdb7845a42587e1a1c0a43a3
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9