SSM3J35AMFV,L3F

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Mfr. #:

SSM3J35AMFV,L3F

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET P-CH 20V 250MA VESM

Упаковка:

Tape & Reel (TR)

Datasheet:

SSM3J35AMFV,L3F Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	SSM3J35AMFV,L3F
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:	4372038dee8fa3554f5e4160a67c0d8b
Drive Voltage (Max Rds On, Min Rds On):	2a209c50c2dd1678cb3d568dbbce6592
Rds On (Max) @ Id, Vgs:	73ee220e4d20946fa2e952d097c9ba77
Vgs(th) (Max) @ Id:	1e7836d87f20b8e73811ba7239315a87
Gate Charge (Qg) (Max) @ Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs (Max):	10c38ebf444fc04b1bb74eda03c48b9f
Input Capacitance (Ciss) (Max) @ Vds:	73307fdb2eeda0b177a2b2c04b4c2899
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	b076f3636e454aebe9bc375302480bb7
Operating Temperature:	9ba6558c95ad6e5d701d599c4dbbddd6
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	f0dc9e2bb67aea25f3429950e6478e66
Package / Case:	304e247e63e29f16be170ede2fd6775d