TPN3300ANH,LQ

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Mfr. #:

TPN3300ANH,LQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 100V 9.4A 8TSON

Упаковка:

Tape & Reel (TR)

Datasheet:

TPN3300ANH,LQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TPN3300ANH,LQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	3c0bb4c0b844d9f1f413626d3bd94355
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	73d9367cf8a03fe2751398ae731bd459
Vgs(th) (Max) @ Id:	b3c2b77f4000524b1efc625ac9e32555
Gate Charge (Qg) (Max) @ Vgs:	e8a30954980feb5704747c3b8f94ff10
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	7b3123227c115319bc857c2b6eb8963e
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	450d6a586c2ccaba993b7e31cee9b087
Operating Temperature:	a05f788eae82918882d3b91ce435570b
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	cd5ffa77c25e09aa386bda2b04d3b368
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9