XPN12006NC,L1XHQ

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See Product Specifications

Mfr. #:

XPN12006NC,L1XHQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 60V 20A 8TSON

Упаковка:

Tape & Reel (TR)

Datasheet:

XPN12006NC,L1XHQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	XPN12006NC,L1XHQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	111fd243cc71936455964c3956dd2e28
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	5641f34e7c257489d10039aa78d2f285
Vgs(th) (Max) @ Id:	ff0f2850a29285b34836cdb7f1c11aa9
Gate Charge (Qg) (Max) @ Vgs:	972213b4ff98b73fb67879667322f035
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	46c8367c7ae984e8425d13016b5a49a0
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	9a89cc95043fae4e2135b24e293ac5c9
Operating Temperature:	8fc8607d1eb9d0c756392186b450f26c
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	3e42f29adef0eb904bbb66eb9e3cf322
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9