XPN9R614MC,L1XHQ

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See Product Specifications

Mfr. #:

XPN9R614MC,L1XHQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET P-CH 40V 40A 8TSON

Упаковка:

Tape & Reel (TR)

Datasheet:

XPN9R614MC,L1XHQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	XPN9R614MC,L1XHQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:	e50dae7122d252f8a7317c11068ffb56
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	a29e9c594c82b485d85fa23c1a995824
Vgs(th) (Max) @ Id:	53a6796bad5b73e382959a6d2bf2cb3c
Gate Charge (Qg) (Max) @ Vgs:	be69521523ed1944c9553e3d8fbb478f
Vgs (Max):	02cc895643c87c92ed1c8005e0d8d38d
Input Capacitance (Ciss) (Max) @ Vds:	4ffe4e225a34038a24dcf8433303b23e
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	6176c265725a78da1092de0b25b30a25
Operating Temperature:	a3ecb8c734de728296fa3b72c67bbd58
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	3e42f29adef0eb904bbb66eb9e3cf322
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9