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See Product Specifications
| номер части: | XPN9R614MC,L1XHQ |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Toshiba Semiconductor and Storage |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 9945a529f9f3f7e23d6cd49cab56133a |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 628cbc3e45d5bacb32414a526acf56ef |
| Current - Continuous Drain (Id) @ 25°C: | e50dae7122d252f8a7317c11068ffb56 |
| Drive Voltage (Max Rds On, Min Rds On): | 214881f189d1d05281deda79f8c1bf77 |
| Rds On (Max) @ Id, Vgs: | a29e9c594c82b485d85fa23c1a995824 |
| Vgs(th) (Max) @ Id: | 53a6796bad5b73e382959a6d2bf2cb3c |
| Gate Charge (Qg) (Max) @ Vgs: | be69521523ed1944c9553e3d8fbb478f |
| Vgs (Max): | 02cc895643c87c92ed1c8005e0d8d38d |
| Input Capacitance (Ciss) (Max) @ Vds: | 4ffe4e225a34038a24dcf8433303b23e |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 6176c265725a78da1092de0b25b30a25 |
| Operating Temperature: | a3ecb8c734de728296fa3b72c67bbd58 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 3e42f29adef0eb904bbb66eb9e3cf322 |
| Package / Case: | 67fd376bd79eda48286f8f6e0131d8c9 |
