XPW4R10ANB,L1XHQ

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Mfr. #:

XPW4R10ANB,L1XHQ

Mfr.:

Toshiba Semiconductor and Storage

Описание:

MOSFET N-CH 100V 70A AEC-Q101

Упаковка:

Tape & Reel (TR)

Datasheet:

XPW4R10ANB,L1XHQ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	XPW4R10ANB,L1XHQ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	01a654fc53f0b70a0ab169396b99d213
Drive Voltage (Max Rds On, Min Rds On):	9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:	8813466c732d9e31b78d013d8144c2e2
Vgs(th) (Max) @ Id:	92e41164c30579f3defe30c91bbd1c8d
Gate Charge (Qg) (Max) @ Vgs:	4654abfef5e6b00713567f19e88c7a76
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	98b6edb72f4a0d4e546b659919fd3f4b
FET Feature:	eb6d8ae6f20283755b339c0dc273988b
Power Dissipation (Max):	bfa3d0a034898aeabdf672484043fbee
Operating Temperature:	8fc8607d1eb9d0c756392186b450f26c
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	b009cfe3cd8a49ad04b58345ea051141
Package / Case:	67fd376bd79eda48286f8f6e0131d8c9