LS101B-GS08

LS101B-GS08

Images are for reference only
See Product Specifications

LS101B-GS08
Описание:
DIODE SCHOTTKY 50V 30MA SOD80
Упаковка:
Tape & Reel (TR)
Datasheet:
LS101B-GS08 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:LS101B-GS08
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Vishay General Semiconductor - Diodes Division
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:aaa0376e51a49c9332dde4f69ea77455
Voltage - DC Reverse (Vr) (Max):1c53213259cb70ca6e36d7a9c97e7231
Current - Average Rectified (Io):8557be76fb915951fd14114511d99c34
Voltage - Forward (Vf) (Max) @ If:567e32d8665d6cb31d04bf4ab6d1a6db
Speed:a0189688e63fa3c4576aed928f6b00f7
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:fc4234a2f3200207d362d9207cc64267
Capacitance @ Vr, F:60efeaf0466bdb058fcb9cf080b09a08
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:592c01a05e890761a24f288de734d2d5
Supplier Device Package:cfe7dbfe622423842451f81a97d44f3a
Operating Temperature - Junction:86647346b14bcada816e001402d83205
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
GS1006HE_R1_00001
GS1006HE_R1_00001
Panjit International Inc.
SURFACE GENERAL PURPOSE RECTIFIE
BYV29F-600,127
BYV29F-600,127
NXP Semiconductors
NOW WEEN - BYV29F-600 - ULTRAFAS
MURS820A-BP
MURS820A-BP
Micro Commercial Co
8A/200V FRED RECTIFIERS,TO-220AC
PMEG2020CPAS115
PMEG2020CPAS115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
GP10-4006-E3/54
GP10-4006-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 1A DO204AL
SS12P2LHM3_A/H
SS12P2LHM3_A/H
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20V 12A TO277A
JANTX1N5621/TR
JANTX1N5621/TR
Microchip Technology
RECTIFIER UFR,FRR
HFA105NH60R
HFA105NH60R
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 105A HALFPAK
MS104/TR12
MS104/TR12
Microsemi Corporation
DIODE SCHOTTKY 40V 1A DO204AL
IRD3CH53DB6
IRD3CH53DB6
Infineon Technologies
DIODE GEN PURP 1.2KV 100A DIE
MUR120SHR5G
MUR120SHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AA
SFAF1607GHC0G
SFAF1607GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 16A ITO220AC
Вас также может заинтересовать
VBUS05M2-HT1-G4-08
VBUS05M2-HT1-G4-08
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.5VWM 18VC LLP1006-3L
TPSMA6.8AHM3_B/I
TPSMA6.8AHM3_B/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 5.8VWM 10.5VC DO214AC
SMBJ8.0C-E3/52
SMBJ8.0C-E3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 8VWM 15VC DO214AA
P4SMA39AHM3/I
P4SMA39AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AC
VS-KBPC602
VS-KBPC602
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 200V 6A D-72
3N253-E4/72
3N253-E4/72
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 50V 2A KBPM
BYV27-100-TAP
BYV27-100-TAP
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 100V 2A SOD57
UG1A-E3/54
UG1A-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
VS-10ETF04STRR-M3
VS-10ETF04STRR-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 10A D2PAK
BAQ34-GS18
BAQ34-GS18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 60V 200MA SOD80
BZT52C3V3-HE3-18
BZT52C3V3-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 3.3V 410MW SOD123
PTV20B-M3/85A
PTV20B-M3/85A
Vishay General Semiconductor - Diodes Division
DIODE ZENER 21.2V 600MW DO220AA