VS-ETF150Y65N

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See Product Specifications

Mfr. #:

VS-ETF150Y65N

Mfr.:

Vishay General Semiconductor - Diodes Division

Описание:

IGBT MOD 650V 201A 600W

Упаковка:

Box

Datasheet:

VS-ETF150Y65N Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	VS-ETF150Y65N
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - IGBTs - Modules
Производитель:	Vishay General Semiconductor - Diodes Division
Упаковка:	Box
Product Status:	ec30c235d0eb792797af1aa1d11759a7
IGBT Type:	2e86438e971de59fdacd9db11a83b0fc
Configuration:	c41a4fe386ab7b32c43e172365ff31ac
Voltage - Collector Emitter Breakdown (Max):	347f255197950e6b02089b73b6a8acdd
Current - Collector (Ic) (Max):	c5f9f5b821b94c96c5bb9845de80c367
Power - Max:	20436f0b91063267a27ab6abdffd3c8b
Vce(on) (Max) @ Vge, Ic:	f46faa8038a96f7070626e32c7342ecc
Current - Collector Cutoff (Max):	336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Cies) @ Vce:	336d5ebc5436534e61d16e63ddfca327
Input:	eb6d8ae6f20283755b339c0dc273988b
NTC Thermistor:	93cba07454f06a4a960172bbd6e2a435
Operating Temperature:	dfb4ad46e1ac805451b8f397e97630b4
Mounting Type:	336d5ebc5436534e61d16e63ddfca327
Package / Case:	e55f75a29310d7b60f7ac1d390c8ae42
Supplier Device Package:	e55f75a29310d7b60f7ac1d390c8ae42