SI2304DDS-T1-GE3

SI2304DDS-T1-GE3

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SI2304DDS-T1-GE3
Описание:
MOSFET N-CH 30V 3.3A/3.6A SOT23
Упаковка:
Tape & Reel (TR)
Datasheet:
SI2304DDS-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SI2304DDS-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:5e7b08fa55499eb776b7d2d35b3a1d40
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:6f67894a4a96c01b4f2d2786914f3d99
Vgs(th) (Max) @ Id:17ed95a87d7b17ee9a8302d07765c7da
Gate Charge (Qg) (Max) @ Vgs:ab3ba9689a25d7346e98cfd22998b60f
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:f24c3330079958ceb789f9a9306de7e4
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):fa8825fffec5e635ea5cafa1ef78afc3
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:86ee1c19077e759cc02645e69bcd58b2
Package / Case:51bf93173785f0f3fc2d8b70cf119689
In Stock: 0
Stock:
0 Can Ship Immediately
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