SI2365EDS-T1-GE3

SI2365EDS-T1-GE3

Images are for reference only
See Product Specifications

SI2365EDS-T1-GE3
Описание:
MOSFET P-CH 20V 5.9A TO236
Упаковка:
Tape & Reel (TR)
Datasheet:
SI2365EDS-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SI2365EDS-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:82b1a256a0a780d29db6dc1635b29034
Drive Voltage (Max Rds On, Min Rds On):72f93dd3e24aa2b695818cce6ee9270b
Rds On (Max) @ Id, Vgs:e67f8dc91d7ffd6ba19b87561ce9dd63
Vgs(th) (Max) @ Id:fb74aa2ff10bb77cff79f565b135beed
Gate Charge (Qg) (Max) @ Vgs:dc82ecc97e5111a1a565b115a22b3692
Vgs (Max):141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):9d8f0cb724c7b1bf2d38fd46b402117c
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:86ee1c19077e759cc02645e69bcd58b2
Package / Case:51bf93173785f0f3fc2d8b70cf119689
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
EPC2001C
EPC2001C
EPC
GANFET N-CH 100V 36A DIE OUTLINE
CSD17571Q2
CSD17571Q2
Texas Instruments
MOSFET N-CH 30V 22A 6SON
FQU4N50TU
FQU4N50TU
Fairchild Semiconductor
MOSFET N-CH 500V 2.6A IPAK
SQJ488EP-T1_GE3
SQJ488EP-T1_GE3
Vishay Siliconix
MOSFET N-CH 100V 42A PPAK SO-8
STP20NM60FD
STP20NM60FD
STMicroelectronics
MOSFET N-CH 600V 20A TO220AB
IXTH16N10D2
IXTH16N10D2
IXYS
MOSFET N-CH 100V 16A TO247
IXFR80N50P
IXFR80N50P
IXYS
MOSFET N-CH 500V 45A ISOPLUS247
NVTFS4C10NWFTAG
NVTFS4C10NWFTAG
onsemi
MOSFET N-CH 30V 15.3A/47A 8WDFN
2SK1588-T1-AZ
2SK1588-T1-AZ
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
SQJQ160E-T1_GE3
SQJQ160E-T1_GE3
Vishay Siliconix
AUTOMOTIVE N-CHANNEL 60 V (D-S)
NDB6020P
NDB6020P
onsemi
P-CHANNEL LOGIC LEVEL ENHANCEMEN
FQB2N30TM
FQB2N30TM
onsemi
MOSFET N-CH 300V 2.1A D2PAK
Вас также может заинтересовать
SI7540ADP-T1-GE3
SI7540ADP-T1-GE3
Vishay Siliconix
MOSFET N/P-CH POWERPAK8
SI4539ADY-T1-GE3
SI4539ADY-T1-GE3
Vishay Siliconix
MOSFET N/P-CH 30V 4.4A 8-SOIC
SI4800BDY-T1-GE3
SI4800BDY-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 6.5A 8SO
SIDR390DP-T1-RE3
SIDR390DP-T1-RE3
Vishay Siliconix
MOSFET N-CH 30V 69.9A/100A PPAK
SIHP7N60E-GE3
SIHP7N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V 7A TO220AB
SQJ403BEEP-T1_BE3
SQJ403BEEP-T1_BE3
Vishay Siliconix
P-CHANNEL 30-V (D-S) 175C MOSFET
SIHP18N60E-GE3
SIHP18N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V 18A TO220AB
SIHA21N60EF-E3
SIHA21N60EF-E3
Vishay Siliconix
MOSFET N-CH 600V 21A TO220
SIHP24N65EF-GE3
SIHP24N65EF-GE3
Vishay Siliconix
MOSFET N-CH 650V 24A TO220AB
IRFB9N30A
IRFB9N30A
Vishay Siliconix
MOSFET N-CH 300V 9.3A TO220AB
DG401AK
DG401AK
Vishay Siliconix
IC SWITCH CMOS 16DIP
SI9112DY-T1-E3
SI9112DY-T1-E3
Vishay Siliconix
IC REG CTRLR MULT TOP 14SOIC