SI4890BDY-T1-GE3

SI4890BDY-T1-GE3

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SI4890BDY-T1-GE3
Описание:
MOSFET N-CH 30V 16A 8SO
Упаковка:
Tape & Reel (TR)
Datasheet:
SI4890BDY-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SI4890BDY-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:0ce64d6e046c1eac90dde8af59f23c07
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:5641f34e7c257489d10039aa78d2f285
Vgs(th) (Max) @ Id:50f9dd8df55d79a3e312d76bbd14e5ef
Gate Charge (Qg) (Max) @ Vgs:bc58166896f73e30fff327343c82357f
Vgs (Max):fbd977bb3518279a4b9189d4188fb888
Input Capacitance (Ciss) (Max) @ Vds:966e721df286606a1e4eeee6b236dc5b
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):c3eed2ea5fad26e012642d9dad57b6a6
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:f540a82a31d84dfe2e0dd06b324c8a8f
Package / Case:f80d2dd5409d1e9f8a546eb6d6a8728d
In Stock: 0
Stock:
0 Can Ship Immediately
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