SI5475BDC-T1-GE3

SI5475BDC-T1-GE3

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SI5475BDC-T1-GE3
Описание:
MOSFET P-CH 12V 6A 1206-8
Упаковка:
Tape & Reel (TR)
Datasheet:
SI5475BDC-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SI5475BDC-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):fd06a160a7273ee2b718dbba07f948a2
Current - Continuous Drain (Id) @ 25°C:c8334ef5d2640f5ce1f0e830c938d440
Drive Voltage (Max Rds On, Min Rds On):72f93dd3e24aa2b695818cce6ee9270b
Rds On (Max) @ Id, Vgs:50b4da545cc22252dd000dba3ec8aec5
Vgs(th) (Max) @ Id:fb74aa2ff10bb77cff79f565b135beed
Gate Charge (Qg) (Max) @ Vgs:b2ba15dc31c93b88878e897e6d67265d
Vgs (Max):141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:13fde3856b838e49878ca1ddf0d7783e
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):5fc427b1193f1b3ce7eb453c9e31360d
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cb9dd16c5e3292c6317edbe6b4588fb1
Package / Case:329165b0aed20d92ef6c9391381735e0
In Stock: 0
Stock:
0 Can Ship Immediately
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