SI8401DB-T1-E3

SI8401DB-T1-E3

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SI8401DB-T1-E3
Описание:
MOSFET P-CH 20V 3.6A 4MICROFOOT
Упаковка:
Tape & Reel (TR)
Datasheet:
SI8401DB-T1-E3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SI8401DB-T1-E3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:c985a4ecf583f7bf51241a68fb32b769
Drive Voltage (Max Rds On, Min Rds On):ad55046ae2fc0687ff363bc051e1507d
Rds On (Max) @ Id, Vgs:a46ec9c4a41e854e3f9015feeecf96d5
Vgs(th) (Max) @ Id:38a9af671f4b9e0481a15da5e45eff0e
Gate Charge (Qg) (Max) @ Vgs:4b8488661a1eb635a65f0cc2471f845a
Vgs (Max):ed5450af4f622d5d61945c0592c793a8
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):88b89cb46ca96466fb72484e59788e94
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:1aaf8f68e6ea8b249cbd6150c73aff95
Package / Case:55fedae3a6d7bc6ef8c299404480e544
In Stock: 0
Stock:
0 Can Ship Immediately
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