SI8406DB-T2-E1

SI8406DB-T2-E1

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SI8406DB-T2-E1
Описание:
MOSFET N-CH 20V 16A 6MICRO FOOT
Упаковка:
Tape & Reel (TR)
Datasheet:
SI8406DB-T2-E1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SI8406DB-T2-E1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:0ce64d6e046c1eac90dde8af59f23c07
Drive Voltage (Max Rds On, Min Rds On):72f93dd3e24aa2b695818cce6ee9270b
Rds On (Max) @ Id, Vgs:ff67e047e93929760d3825b41b4c9e59
Vgs(th) (Max) @ Id:d09735bd573a32544a95585aed4af994
Gate Charge (Qg) (Max) @ Vgs:56a28b70731121869aa2e2be9c0b3a99
Vgs (Max):141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:e4b0406ff97a5809591e83a3e768e785
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):754e44850a901d590da0229bf70c31ed
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:661ac98c474617dfbf3c958d17fb2ca6
Package / Case:b680807f8d9350117f1fe11ed3c4dd77
In Stock: 0
Stock:
0 Can Ship Immediately
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