SI8483DB-T2-E1

SI8483DB-T2-E1

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SI8483DB-T2-E1
Описание:
MOSFET P-CH 12V 16A 6MICRO FOOT
Упаковка:
Tape & Reel (TR)
Datasheet:
SI8483DB-T2-E1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SI8483DB-T2-E1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):fd06a160a7273ee2b718dbba07f948a2
Current - Continuous Drain (Id) @ 25°C:0ce64d6e046c1eac90dde8af59f23c07
Drive Voltage (Max Rds On, Min Rds On):c20b0e732e8e50ac667a2996b676523a
Rds On (Max) @ Id, Vgs:6768ad2fc9479fb003dfcf4be4933d3e
Vgs(th) (Max) @ Id:ca87f9064cd95fc0bb3d9137ab50b2aa
Gate Charge (Qg) (Max) @ Vgs:f42b3edaa3b0932caf53a646d86ff897
Vgs (Max):10c38ebf444fc04b1bb74eda03c48b9f
Input Capacitance (Ciss) (Max) @ Vds:479a2338038e30ac8ddb66db63bfc23f
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):754e44850a901d590da0229bf70c31ed
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:661ac98c474617dfbf3c958d17fb2ca6
Package / Case:b680807f8d9350117f1fe11ed3c4dd77
In Stock: 0
Stock:
0 Can Ship Immediately
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