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See Product Specifications
| номер части: | SI8810EDB-T2-E1 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 1d4b1d1d0414ed964cb9de7f5a150f63 |
| Current - Continuous Drain (Id) @ 25°C: | 4c4b42bde7c74862496f0544f03d7def |
| Drive Voltage (Max Rds On, Min Rds On): | c20b0e732e8e50ac667a2996b676523a |
| Rds On (Max) @ Id, Vgs: | 215e0e10fc8ed83a6c97286077ac0f40 |
| Vgs(th) (Max) @ Id: | 97851845d1794c1701252b6a9d63f32b |
| Gate Charge (Qg) (Max) @ Vgs: | 73c750163c596eb73d4e842cb57e7efa |
| Vgs (Max): | 141ce97fa4644284a9f0bfb5e7811ba1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 8b72e111e92c5833bb5afdc3e4e0378f |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | ae2350350ba6e5a69d2dc91b08eae7b5 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 1aaf8f68e6ea8b249cbd6150c73aff95 |
| Package / Case: | ffb21751071a582b44fef22ed4c019d8 |
