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See Product Specifications
| номер части: | SI8812DB-T2-E1 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 1d4b1d1d0414ed964cb9de7f5a150f63 |
| Current - Continuous Drain (Id) @ 25°C: | f61661d642430f47521967b9829f5bfd |
| Drive Voltage (Max Rds On, Min Rds On): | 2a209c50c2dd1678cb3d568dbbce6592 |
| Rds On (Max) @ Id, Vgs: | 7bb6fb802d4c2a6fc9a42dca1ac6c8d0 |
| Vgs(th) (Max) @ Id: | fb74aa2ff10bb77cff79f565b135beed |
| Gate Charge (Qg) (Max) @ Vgs: | 0303146970d16495a7b04a754a4d8fa4 |
| Vgs (Max): | 051eb3694b8dd0dc96802e319d53b81e |
| Input Capacitance (Ciss) (Max) @ Vds: | 336d5ebc5436534e61d16e63ddfca327 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | ae2350350ba6e5a69d2dc91b08eae7b5 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 1aaf8f68e6ea8b249cbd6150c73aff95 |
| Package / Case: | c7c8499191ead591bae7c86092c2190f |
