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See Product Specifications
| номер части: | SIA416DJ-T1-GE3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Current - Continuous Drain (Id) @ 25°C: | 2768820b7eb8f891fa08b94180ef6a2f |
| Drive Voltage (Max Rds On, Min Rds On): | 214881f189d1d05281deda79f8c1bf77 |
| Rds On (Max) @ Id, Vgs: | 6f09f280dc47c8525a02b9241c430ced |
| Vgs(th) (Max) @ Id: | 66756bbbd2b15b665d5248f5ca1758a1 |
| Gate Charge (Qg) (Max) @ Vgs: | 9a935c8a1e91b57e9b3af740b54c1dd2 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 365def77f3415b2d4d2b7c200aea9587 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 75787a4344f173cc8e2c9e7678b73b3f |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 98d85f5568654e09ffeef6b181653587 |
| Package / Case: | 98d85f5568654e09ffeef6b181653587 |
