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See Product Specifications
| номер части: | SIA419DJ-T1-GE3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| FET Type: | 9945a529f9f3f7e23d6cd49cab56133a |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 1d4b1d1d0414ed964cb9de7f5a150f63 |
| Current - Continuous Drain (Id) @ 25°C: | c98954c6bcd184452c80864782c9ab71 |
| Drive Voltage (Max Rds On, Min Rds On): | 2a209c50c2dd1678cb3d568dbbce6592 |
| Rds On (Max) @ Id, Vgs: | 0ee450d6c5144052e13a16d779e5f50d |
| Vgs(th) (Max) @ Id: | d09735bd573a32544a95585aed4af994 |
| Gate Charge (Qg) (Max) @ Vgs: | ba7b675b1ddc6104275b2cb4ab0e7b37 |
| Vgs (Max): | 051eb3694b8dd0dc96802e319d53b81e |
| Input Capacitance (Ciss) (Max) @ Vds: | 802c9bd46cb318125ace22a6b501faf0 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 75787a4344f173cc8e2c9e7678b73b3f |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 98d85f5568654e09ffeef6b181653587 |
| Package / Case: | 98d85f5568654e09ffeef6b181653587 |
