SIA430DJ-T1-GE3

SIA430DJ-T1-GE3

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SIA430DJ-T1-GE3
Описание:
MOSFET N-CH 20V 12A PPAK SC70-6
Упаковка:
Tape & Reel (TR)
Datasheet:
SIA430DJ-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIA430DJ-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:c98954c6bcd184452c80864782c9ab71
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:9ef7adfed8edd85122ba6b90196c48a7
Vgs(th) (Max) @ Id:66756bbbd2b15b665d5248f5ca1758a1
Gate Charge (Qg) (Max) @ Vgs:b6c2223d9fea96566cb6abb13712652f
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:543e4f6ce48d608cc6b8435d1fe42ffe
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):120d405045e4a774cb1e4cb1c5753c43
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:98d85f5568654e09ffeef6b181653587
Package / Case:98d85f5568654e09ffeef6b181653587
In Stock: 0
Stock:
0 Can Ship Immediately
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