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See Product Specifications
| номер части: | SIA810DJ-T1-GE3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 1d4b1d1d0414ed964cb9de7f5a150f63 |
| Current - Continuous Drain (Id) @ 25°C: | bb8f888d0272cac2ba0c50c267f568d7 |
| Drive Voltage (Max Rds On, Min Rds On): | 72f93dd3e24aa2b695818cce6ee9270b |
| Rds On (Max) @ Id, Vgs: | fab8bcbb3fec526f20d2471df8cd61fb |
| Vgs(th) (Max) @ Id: | fb74aa2ff10bb77cff79f565b135beed |
| Gate Charge (Qg) (Max) @ Vgs: | 2d2e43ac7bc5e70381312caa45ec5bab |
| Vgs (Max): | 141ce97fa4644284a9f0bfb5e7811ba1 |
| Input Capacitance (Ciss) (Max) @ Vds: | b9db85367939136a6e23dc8b21999ef8 |
| FET Feature: | 6ddb2436bf1d98a374a4c8e5a45f901a |
| Power Dissipation (Max): | c80eddd8458ea51108c9d54b8d735196 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | d3f03ccf4b98e812c6a1b40c09e59270 |
| Package / Case: | d3f03ccf4b98e812c6a1b40c09e59270 |
