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See Product Specifications
| номер части: | SIAA02DJ-T1-GE3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 1d4b1d1d0414ed964cb9de7f5a150f63 |
| Current - Continuous Drain (Id) @ 25°C: | e86b8ad7daa1a59505d2bde676f67793 |
| Drive Voltage (Max Rds On, Min Rds On): | b076aa5277458f91fd2c66160075162b |
| Rds On (Max) @ Id, Vgs: | 4eaafa92f4e21ee967d8012a5c588c2a |
| Vgs(th) (Max) @ Id: | 2ae1341e8bc6ebfd696b1786563421c1 |
| Gate Charge (Qg) (Max) @ Vgs: | bc58166896f73e30fff327343c82357f |
| Vgs (Max): | 0266d9163d51a5f7c3780149b6391b40 |
| Input Capacitance (Ciss) (Max) @ Vds: | 03495cf02fd0553a025b4af948ccc1f4 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 75787a4344f173cc8e2c9e7678b73b3f |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 98d85f5568654e09ffeef6b181653587 |
| Package / Case: | 98d85f5568654e09ffeef6b181653587 |
