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See Product Specifications
| номер части: | SIDR638DP-T1-GE3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 628cbc3e45d5bacb32414a526acf56ef |
| Current - Continuous Drain (Id) @ 25°C: | 4cd988b83fc990b9e8358853bdd4f330 |
| Drive Voltage (Max Rds On, Min Rds On): | 214881f189d1d05281deda79f8c1bf77 |
| Rds On (Max) @ Id, Vgs: | af8e798c2fb6617f1bc4ccc9aa47f925 |
| Vgs(th) (Max) @ Id: | d2c672ec0f8556ce03313315edf78999 |
| Gate Charge (Qg) (Max) @ Vgs: | 3c2841195d509f9d02f1e13bf36fb74e |
| Vgs (Max): | f913025ad223365d0b25fdfdc38191e9 |
| Input Capacitance (Ciss) (Max) @ Vds: | 9ea43445e1b4543a427f5cac9db916f1 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 9ab21596dbbd1fdf7a3f4aba0a4832ee |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 8bbbeed690bb4914da195644f5724eda |
| Package / Case: | cdb17de75fc2484291d63ea33c94254f |
