SIE830DF-T1-E3

SIE830DF-T1-E3

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SIE830DF-T1-E3
Описание:
MOSFET N-CH 30V 50A 10POLARPAK
Упаковка:
Tape & Reel (TR)
Datasheet:
SIE830DF-T1-E3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIE830DF-T1-E3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:de6fb719240c75cb73005d80d2170f88
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:fc4ac3ab353bcf0257daefe76a76c33d
Vgs(th) (Max) @ Id:47646805bddee9d06a7f0cc80c73c037
Gate Charge (Qg) (Max) @ Vgs:594536af3e5ada131732d1a4767e4018
Vgs (Max):ed5450af4f622d5d61945c0592c793a8
Input Capacitance (Ciss) (Max) @ Vds:92d939226547e25ce074f7043b17a465
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):5e0981441614a427eb8dd1a3e13d9fb5
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:003d7856a5e07bea3c9fcb016150b5f8
Package / Case:003d7856a5e07bea3c9fcb016150b5f8
In Stock: 0
Stock:
0 Can Ship Immediately
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