SIHA4N80E-GE3

SIHA4N80E-GE3

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SIHA4N80E-GE3
Описание:
MOSFET N-CH 800V 4.3A TO220
Упаковка:
Tube
Datasheet:
SIHA4N80E-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIHA4N80E-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):faca79d8bea430c6302af6f2e2f59d12
Current - Continuous Drain (Id) @ 25°C:bd834a29379fef968a05da6094f3cbf0
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:4e09adb04100cdc9b44ad7976853e378
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:f1d4411c14a38876d735f24f8437b43a
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:5de066b63370daa25eaa86be7b281726
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):0180700acc4ad5b226d8b8b5bc6e5a5a
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:2e5915171627bd54d56c6fb913807af8
Package / Case:a02e0d1a928de3366340ceae094aecd8
In Stock: 0
Stock:
0 Can Ship Immediately
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