SIHB068N60EF-GE3

SIHB068N60EF-GE3

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SIHB068N60EF-GE3
Описание:
MOSFET N-CH 600V 41A D2PAK
Упаковка:
Tube
Datasheet:
SIHB068N60EF-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIHB068N60EF-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:9c28d70cd2b3e1fa36305c506b92eea7
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:d35367154a03ecae4676394fd1ce3178
Vgs(th) (Max) @ Id:aa9c33afb123e4299b76ff79e98e6369
Gate Charge (Qg) (Max) @ Vgs:d022c62db6fda99fc3b9e49937214f0e
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:86368e65b04e384e8049b678964c87f3
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):2f8fb1b958a63c9c2907182cbf2e2287
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:bf4aa032e4c992412ea226c67524cac7
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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