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See Product Specifications
| номер части: | SIHB21N80AE-GE3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | faca79d8bea430c6302af6f2e2f59d12 |
| Current - Continuous Drain (Id) @ 25°C: | d01fe9f2dad28d7ddf276329596f9d0e |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | 2f5c293a643ab45438ec21f776219310 |
| Vgs(th) (Max) @ Id: | 9238c44d66e9d51854326c16b3397896 |
| Gate Charge (Qg) (Max) @ Vgs: | 0e5e0c17b2bce4b4fdcaa9216e9ca15b |
| Vgs (Max): | 972af1bbf385e6f2ec41d2be6228bd7e |
| Input Capacitance (Ciss) (Max) @ Vds: | 2f516e0a2758709308fd1a308a2ff369 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 406dba73f1f3ca19a0e34dad722968b9 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | bf4aa032e4c992412ea226c67524cac7 |
| Package / Case: | 99446f4470b43888d0c78d7d2cdfc956 |
