SIHB33N60E-GE3

SIHB33N60E-GE3

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SIHB33N60E-GE3
Описание:
MOSFET N-CH 600V 33A D2PAK
Упаковка:
Bulk
Datasheet:
SIHB33N60E-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIHB33N60E-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:9ec68034a8e930faf0d8a3926bb7aecc
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:ec8d12aca41e962f3a1a02140ac4a5cc
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:789bf5e31e323fc83c66ab09e5c299d7
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:12655a11c519d34a82d2ef10b637c19f
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):98fe293bad73f8f9d10b4fdf04da54d4
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:bf4aa032e4c992412ea226c67524cac7
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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