SIR172ADP-T1-GE3

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See Product Specifications

Mfr. #:

SIR172ADP-T1-GE3

Mfr.:

Vishay Siliconix

Описание:

MOSFET N-CH 30V 24A PPAK SO-8

Упаковка:

Tape & Reel (TR)

Datasheet:

SIR172ADP-T1-GE3 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	SIR172ADP-T1-GE3
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Vishay Siliconix
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	0c4305b7a2c4450b64b22399f0cdda6c
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	53ae9a5e4a100809676ca691071d94a5
Vgs(th) (Max) @ Id:	604e14281627abaa31ad75dce0e5c80f
Gate Charge (Qg) (Max) @ Vgs:	5e956ff29411bf2bfe968d20fcfc4199
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	c2b8a68665f65d1ccd04306870b03273
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	d3069a7859cc9cf9d7d567f25cc755d6
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	cdb17de75fc2484291d63ea33c94254f
Package / Case:	cdb17de75fc2484291d63ea33c94254f