SIR496DP-T1-GE3

SIR496DP-T1-GE3

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SIR496DP-T1-GE3
Описание:
MOSFET N-CH 20V 35A PPAK SO-8
Упаковка:
Tape & Reel (TR)
Datasheet:
SIR496DP-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIR496DP-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:822fa9074467f53dd633c6786e269596
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:4221323dfb7a741b5f8865b44b9e81c4
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:eda12ce59387147f71becfad75fd268d
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:55d0deeb8aa1057dfd3f9a498246c42b
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):d32a6857a9792691b0043610fa4c2558
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cdb17de75fc2484291d63ea33c94254f
Package / Case:cdb17de75fc2484291d63ea33c94254f
In Stock: 0
Stock:
0 Can Ship Immediately
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