SIR626DP-T1-RE3

SIR626DP-T1-RE3

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SIR626DP-T1-RE3
Описание:
MOSFET N-CH 60V 100A PPAK SO-8
Упаковка:
Tape & Reel (TR)
Datasheet:
SIR626DP-T1-RE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIR626DP-T1-RE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:4cd988b83fc990b9e8358853bdd4f330
Drive Voltage (Max Rds On, Min Rds On):9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:c3cbce5a324089d867bb5f1388d96bec
Vgs(th) (Max) @ Id:0bcaa49d6e8ca30aef2231ea4bd13d5f
Gate Charge (Qg) (Max) @ Vgs:b3141f83d0b0ee245027a2d1c4d34f77
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:3ae894b9fd8b2b04253a0b8d09c4420f
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):9911ad4440d4c4ad12abf0c7ff0a94ad
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cdb17de75fc2484291d63ea33c94254f
Package / Case:cdb17de75fc2484291d63ea33c94254f
In Stock: 0
Stock:
0 Can Ship Immediately
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