SIS439DNT-T1-GE3

SIS439DNT-T1-GE3

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SIS439DNT-T1-GE3
Описание:
MOSFET P-CH 30V 50A PPAK1212-8S
Упаковка:
Tape & Reel (TR)
Datasheet:
SIS439DNT-T1-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SIS439DNT-T1-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:de6fb719240c75cb73005d80d2170f88
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:eceaeec3a891b97f02e18b0f753d2352
Vgs(th) (Max) @ Id:8fe7610677dc5fce7875270a0a1100b7
Gate Charge (Qg) (Max) @ Vgs:c2a047afd608a5b72d4963a3d3ebdf16
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:08b61bb035828ffbf4e3c0114a96b787
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):4c53ab1584e16c1dea476aad1798e0d6
Operating Temperature:d62d1130aaab6cd79cc1c8ef0f444bae
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:fbd9426cc15e84a26545aa4be6dd2dad
Package / Case:fbd9426cc15e84a26545aa4be6dd2dad
In Stock: 0
Stock:
0 Can Ship Immediately
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