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See Product Specifications
| номер части: | SISHA10DN-T1-GE3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 6f065265b5ad79aa8b78335bb14c6420 |
| Current - Continuous Drain (Id) @ 25°C: | 8661a6a61a1ad2ecb8202e5fd0b14e69 |
| Drive Voltage (Max Rds On, Min Rds On): | 214881f189d1d05281deda79f8c1bf77 |
| Rds On (Max) @ Id, Vgs: | ea83c811eb041d8e70dfdf26010a03bc |
| Vgs(th) (Max) @ Id: | 17ed95a87d7b17ee9a8302d07765c7da |
| Gate Charge (Qg) (Max) @ Vgs: | f1d77fd478746ab7cfbee6192f4977b1 |
| Vgs (Max): | f913025ad223365d0b25fdfdc38191e9 |
| Input Capacitance (Ciss) (Max) @ Vds: | 9a270e8eea6d58d017424842511496d2 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 9f639c1ece0953e0af253432cabb3840 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | d5f1963fdfe632ee20cad40682288c93 |
| Package / Case: | d5f1963fdfe632ee20cad40682288c93 |
