SQJ431EP-T2_GE3

SQJ431EP-T2_GE3

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SQJ431EP-T2_GE3
Описание:
MOSFET P-CH 200V 12A PPAK SO-8
Упаковка:
Tape & Reel (TR)
Datasheet:
SQJ431EP-T2_GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SQJ431EP-T2_GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):b86aa01bc1f9484a191794819edcfc06
Current - Continuous Drain (Id) @ 25°C:c98954c6bcd184452c80864782c9ab71
Drive Voltage (Max Rds On, Min Rds On):9271e32297e2bbc49bb4aadcd764fb6f
Rds On (Max) @ Id, Vgs:e6fde9f9ea19e70133e45d349cad81e4
Vgs(th) (Max) @ Id:54e5d6e67176a5b9df661d089760961f
Gate Charge (Qg) (Max) @ Vgs:ac1c781a7e718e7862c205644858eaa6
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:10fb4e6aeaff4c4e2d25fdab2e4a796a
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):35e259c9e67ff8fd40b9e992f041f118
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cdb17de75fc2484291d63ea33c94254f
Package / Case:cdb17de75fc2484291d63ea33c94254f
In Stock: 0
Stock:
0 Can Ship Immediately
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