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See Product Specifications
| номер части: | SQS660CENW-T1_GE3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 5568a11e95c42251b4839598cb5b4518 |
| Current - Continuous Drain (Id) @ 25°C: | 066e0bb89d610303369c0ca2b47f7252 |
| Drive Voltage (Max Rds On, Min Rds On): | 214881f189d1d05281deda79f8c1bf77 |
| Rds On (Max) @ Id, Vgs: | 2f2c7668f02a0b5db91f5016e9ff572c |
| Vgs(th) (Max) @ Id: | bae68a70e94fb31c33c772f4fdf89b99 |
| Gate Charge (Qg) (Max) @ Vgs: | 3c309df0dab075d5fb4f85fd7f1eb952 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 9b021ea7de444bc09ddd0c650c4c14a6 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | e6115e6b64f7d623eb1f668cebc67c58 |
| Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 6951700d605f20a3377f8b766c1118e2 |
| Package / Case: | 6951700d605f20a3377f8b766c1118e2 |
