SI8441DB-T2-E1

SI8441DB-T2-E1

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SI8441DB-T2-E1
Описание:
MOSFET P-CH 20V 10.5A 6MICROFOOT
Упаковка:
Tape & Reel (TR)
Datasheet:
SI8441DB-T2-E1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SI8441DB-T2-E1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:78d3282e72bc7208c4f6c77deb19981f
Drive Voltage (Max Rds On, Min Rds On):2a209c50c2dd1678cb3d568dbbce6592
Rds On (Max) @ Id, Vgs:623bc0ef770768fda09ffcaaa671f69a
Vgs(th) (Max) @ Id:7025eb3512870eb59f0680822dcd3f84
Gate Charge (Qg) (Max) @ Vgs:057f8fba97f52dc675a0ba1139aefe99
Vgs (Max):051eb3694b8dd0dc96802e319d53b81e
Input Capacitance (Ciss) (Max) @ Vds:2ac289ba9c21e812600d442d24538fc4
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):754e44850a901d590da0229bf70c31ed
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:661ac98c474617dfbf3c958d17fb2ca6
Package / Case:b680807f8d9350117f1fe11ed3c4dd77
In Stock: 0
Stock:
0 Can Ship Immediately
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