GoodChip

Diodes - Bridge Rectifiers

7073 Предметы

Производитель, номер детали	Ряд	Упаковка	Product Status	Diode Type	Technology	Voltage - Peak Reverse (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
GBJ5010 RECTIFIER BRIDGE 50A 1000V GBJ MDD	GBJ	Box	Active	Single Phase	Standard	1 kV	50 A	1.1 V @ 25 A	10 µA @ 1000 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ
GBPC5006W 50A -600V - GBPC-W - BRIDGE SURGE	GBPC50	Bag	Active	Single Phase	Standard	600 V	50 A	1.1 V @ 25 A	5 µA @ 600 V	-65°C ~ 150°C (TJ)	Through Hole	-	-
GBPC5004W 50A -400V - GBPC-W - BRIDGE SURGE	GBPC50	Bag	Active	Single Phase	Standard	400 V	50 A	1.1 V @ 25 A	5 µA @ 400 V	-65°C ~ 150°C (TJ)	Through Hole	-	-
GBPC5010W 50A -1000V - GBPC-W - BRIDGE SURGE	GBPC50	Bag	Active	Single Phase	Standard	1 kV	50 A	1.1 V @ 25 A	5 µA @ 1000 V	-65°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC5010 50A -1000V - GBPC - BRIDGE SURGE	GBPC50	Bag	Active	Single Phase	Standard	1 kV	50 A	1.1 V @ 25 A	5 µA @ 1000 V	-65°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC	GBPC
GBPC5004 50A -400V - GBPC - BRIDGE SURGE	GBPC50	Bag	Active	Single Phase	Standard	400 V	50 A	1.1 V @ 25 A	5 µA @ 400 V	-65°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC	GBPC
BR5006W STD 50A, CASE TYPE: BR50W EIC SEMICONDUCTOR INC.		Bag	Active	Single Phase	Standard	600 V	50 A	1.1 V @ 25 A	10 µA @ 600 V	-40°C ~ 150°C (TJ)	Through Hole	4-Square, BR-50W	BR-50W
RBV5008 BRIGDE RECTIFIER 50A 800V, CASE EIC SEMICONDUCTOR INC.		Bag	Active	Single Phase	Standard	800 V	50 A	1.1 V @ 25 A	10 µA @ 800 V	-40°C ~ 150°C (TJ)	Through Hole	4-SIP, RBV-25	RBV-25
RBV5010 BRIGDE RECTIFIER 50A 1000V, CASE EIC SEMICONDUCTOR INC.		Bag	Active	Single Phase	Standard	1 kV	50 A	1.1 V @ 25 A	10 µA @ 1000 V	-40°C ~ 150°C (TJ)	Through Hole	4-SIP, RBV-25	RBV-25
BR5006 STD 50A, CASE TYPE: BR50 EIC SEMICONDUCTOR INC.		Bag	Active	Single Phase	Standard	600 V	50 A	1.1 V @ 25 A	10 µA @ 600 V	-40°C ~ 150°C (TJ)	Chassis Mount	4-Square, BR-50	BR-50
FBR5006 FR 50A, CASE TYPE: BR50 EIC SEMICONDUCTOR INC.		Bag	Active	Single Phase	Standard	600 V	50 A	1.3 V @ 25 A	10 µA @ 600 V	-50°C ~ 150°C (TJ)	Chassis Mount	4-Square, BR-50	BR-50
KBPC5010 BRIDGE RECT 1P 1KV 50A KBPC MDD	KBPC	Box	Active	Single Phase	Standard	1 kV	50 A	1.1 V @ 25 A	10 µA @ 1000 V	-50°C ~ 150°C (TJ)	Through Hole	4-Square, KBPC	KBPC
BR5010 STD 50A, CASE TYPE: BR50 EIC SEMICONDUCTOR INC.		Bag	Active	Single Phase	Standard	1 kV	50 A	1.1 V @ 25 A	10 µA @ 1000 V	-40°C ~ 150°C (TJ)	Chassis Mount	4-Square, BR-50	BR-50
TS25P05G BRIDGE RECT 1P 600V 25A TS-6P Taiwan Semiconductor Corporation		Tube	Active	Single Phase	Standard	600 V	25 A	1.1 V @ 15 A	10 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
GBPC2510-E4/51 BRIDGE RECT 1PHASE 1KV 25A GBPC Vishay General Semiconductor - Diodes Division		Bulk	Active	Single Phase	Standard	1 kV	25 A	1.1 V @ 12.5 A	5 µA @ 1000 V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
DB157 BRIDGE RECT 1PHASE 1KV 1.5A DB-M SMC Diode Solutions		Tube	Active	Single Phase	Standard	1 kV	1.5 A	1.1 V @ 1.5 A	5 µA @ 1000 V	-55°C ~ 150°C (TJ)	Through Hole	4-EDIP (0.321", 8.15mm)	DB-M
DF04MA-E3/45 BRIDGE RECT 1PHASE 400V 1A DFM Vishay General Semiconductor - Diodes Division		Tube	Active	Single Phase	Standard	400 V	1 A	1.1 V @ 1 A	5 µA @ 400 V	-55°C ~ 150°C (TJ)	Through Hole	4-EDIP (0.300", 7.62mm)	DFM
KBP08G BRIDGE RECT 1PHASE 800V 1.5A KBP Diodes Incorporated		Tube	Active	Single Phase	Standard	800 V	1.5 A	1.1 V @ 1.5 A	5 µA @ 800 V	-65°C ~ 150°C (TJ)	Through Hole	4-SIP, KBP	KBP
2W005G-E4/51 BRIDGE RECT 1PHASE 50V 2A WOG Vishay General Semiconductor - Diodes Division		Bulk	Active	Single Phase	Standard	50 V	2 A	1.1 V @ 2 A	5 µA @ 50 V	-55°C ~ 150°C (TJ)	Through Hole	4-Circular, WOG	WOG
D2SB60 BRIDGE RECT 1PHASE 600V 2A GBL Taiwan Semiconductor Corporation		Tube	Active	Single Phase	Standard	600 V	2 A	1.1 V @ 15 A	10 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBL	GBL