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Transistors - FETs, MOSFETs - RF

3813 Предметы

Производитель, номер детали	Упаковка	Product Status	Transistor Type	Frequency	Gain	Voltage - Test	Current Rating (Amps)	Noise Figure	Current - Test	Power - Output	Voltage - Rated	Package / Case	Supplier Device Package
2N5486 T-JFET N CHANNEL NTE Electronics, Inc	Bag	Active	N-Channel JFET	400MHz	-	15 V	30mA	4dB	4 mA	-	25 V	TO-226-3, TO-92-3 (TO-226AA)	TO-92
NTE221 MOSFET N-CH VHF AMP/MIX NTE Electronics, Inc	Bag	Active	N-Channel	-	20dB	13 V	18mA	5dB	10 mA	-	20 V	TO-206AF, TO-72-4 Metal Can	TO-72
MWT-PH27F TRANS ALGAAS/INGAAS PHEMT Microwave Technology Inc.	Case	Active	pHEMT FET	26GHz	14dB	3 V	120mA	-	1 mA	25dBm	-	Die	Chip
MWT-PH33F TRANS ALGAAS/INGAAS PHEMT Microwave Technology Inc.	Case	Active	pHEMT FET	26GHz	14dB	3 V	90mA	-	1 mA	24dBm	-	Die	Chip
MWT-PH29F TRANS ALGAAS/INGAAS PHEMT Microwave Technology Inc.	Case	Active	pHEMT FET	26GHz	11dB	3 V	330mA	-	1 mA	-	-	Die	Chip
MRF9030MBR1 RF ULTRA HIGH FREQUENCY BAND, N- Freescale Semiconductor	Bulk	Active	N-Channel	1GHz	20dB	26 V	10µA	-	250 mA	30W	65 V	TO-272BC	TO-272-2
MWT-PH31F TRANS ALGAAS/INGAAS PHEMT Microwave Technology Inc.	Case	Active	pHEMT FET	18GHz	13dB	2 V	280mA	-	1 mA	30dBm	-	Die	Chip
MWT-PH32F TRANS ALGAAS/INGAAS PHEMT Microwave Technology Inc.	Case	Active	pHEMT FET	12GHz	13dB	2 V	360mA	-	1 mA	30.5dB	-	Die	Chip
MRF18030ALSR5 FET RF 65V 1.88GHZ NI-400S Freescale Semiconductor	Bulk	Active	LDMOS	1.81GHz ~ 1.88GHz	14dB	26 V	-	-	250 mA	30W	65 V	NI-400S	NI-400S
MRF7S19100NBR1 RF L BAND, N-CHANNEL , TO-272 Freescale Semiconductor	Bulk	Active	LDMOS	1.93GHz ~ 1.99GHz	17.5dB	28 V	-	-	1 A	29W	65 V	TO-272BB	TO-272 WB-4
MRF8HP21080HR5 RF POWER N-CHANNEL, MOSFET Freescale Semiconductor	Bulk	Obsolete	LDMOS (Dual)	2.17GHz	14.4dB	28 V	-	-	150 mA	16W	65 V	NI-780-4	NI-780-4
MWT-3F HIGH POWER GAAS MESFET Microwave Technology Inc.	Case	Active	MESFET	500MHz ~ 26GHz	11dB	4 V	110mA	-	110 mA	22dBm	6 V	Die	Chip
MWT-PH7F MED POWER ALGAAS/INGAAS PHEMT Microwave Technology Inc.	Case	Active	MESFET	28GHz	16dB	3 V	110mA	-	110 mA	24dBm	-	Die	Chip
MRF5S21100HSR5 FET RF 65V 2.17GHZ NI-780S Freescale Semiconductor	Bulk	Active	LDMOS	2.16GHz ~ 2.17GHz	13.5dB	28 V	-	-	1.05 A	23W	65 V	NI-780S	NI-780S
MWT-PH4F MED POWER ALGAAS/INGAAS PHEMT Microwave Technology Inc.	Case	Active	MESFET	28GHz	16dB	3 V	84mA	-	84 mA	22dBm	-	Die	Chip
MRF7S38010HSR5 FET RF 65V 3.6GHZ NI-400S Freescale Semiconductor	Bulk	Active	LDMOS	3.4GHz ~ 3.6GHz	15dB	30 V	-	-	160 mA	2W	65 V	NI-400S-2S	NI-400S-2S
MRF6S18100NBR1 RF L BAND, N-CHANNEL , TO-272 Freescale Semiconductor	Bulk	Active	LDMOS	1.99GHz	14.5dB	28 V	-	-	900 mA	100W	68 V	TO-272BB	TO-272 WB-4
MWT-5F GAAS MESFET Microwave Technology Inc.	Case	Active	GaAs FET	500MHz ~ 26GHz	19dB	6 V	80mA	3.5dB @ 12GHz	30 mA	-	-	Die	Chip
MWT-9F MEDIUM POWER GAAS MESFET Microwave Technology Inc.	Case	Active	MESFET	500MHz ~ 18GHz	8.5dB	4 V	270mA	-	270 mA	26.5dBm	6 V	Die	Chip
BLF6G15L-40BRN,112 RF PFET, 2-ELEMENT, L BAND, SILI NXP USA Inc.	Tube	Active	LDMOS (Dual), Common Source	1.47GHz ~ 1.51GHz	22dB	28 V	11A	-	330 mA	2.5W	65 V	SOT-1112A	CDFM6