IPA65R190E6XKSA1

IPA65R190E6XKSA1

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IPA65R190E6XKSA1
Описание:
MOSFET N-CH 650V 20.2A TO220
Упаковка:
Bulk
Datasheet:
IPA65R190E6XKSA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPA65R190E6XKSA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Bulk
Product Status:a98c7ec8106cf16aced8afc464bc6bdf
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:70832f3c1c13eed642f1954a89cf0e4c
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:9cc5be0283ab40b901761cee9b23b4a1
Vgs(th) (Max) @ Id:ab47e0f50207b72c534b9988eea806ff
Gate Charge (Qg) (Max) @ Vgs:9e2fc6a2ac7bc26249b104db7389f1eb
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:312ad29381cb0057e985c1c81395baea
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):2d0bc073643c20341e5ef1af68333571
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:6b8d3e7548d5176917eac294b3f4a7b6
Package / Case:a02e0d1a928de3366340ceae094aecd8
In Stock: 0
Stock:
0 Can Ship Immediately
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