IPB60R125C6ATMA1

IPB60R125C6ATMA1

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IPB60R125C6ATMA1
Описание:
MOSFET N-CH 600V 30A D2PAK
Упаковка:
Tape & Reel (TR)
Datasheet:
IPB60R125C6ATMA1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IPB60R125C6ATMA1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Infineon Technologies
Упаковка:Tape & Reel (TR)
Product Status:a98c7ec8106cf16aced8afc464bc6bdf
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:b5a4f17035c9cf549f5adf4038dff86d
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:35545c2c3343c1460b0596b72e22cc02
Vgs(th) (Max) @ Id:c1ce31bb99fcc4a67a0d6687a3374b62
Gate Charge (Qg) (Max) @ Vgs:5649e1e30cd332e1350025c26d852d07
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:47e28bff22edca10109e21d505607648
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):60365f9ee339be71acffff28625694d3
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:fa3aee1f7ec3f3747a89416bed6c07d9
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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