PJA3419_R1_00001

PJA3419_R1_00001

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PJA3419_R1_00001
Описание:
30V P-CHANNEL ENHANCEMENT MODE M
Упаковка:
Tape & Reel (TR)
Datasheet:
PJA3419_R1_00001 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:PJA3419_R1_00001
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Panjit International Inc.
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:0fef84355726c5ae6e53a5fd06d60e2d
Drive Voltage (Max Rds On, Min Rds On):d2e44972f573dbb9bc783edf82f45e5b
Rds On (Max) @ Id, Vgs:f4898ba32027ba5203f6252502cb5c19
Vgs(th) (Max) @ Id:b84520e401b6763187bb539da6d1dfbf
Gate Charge (Qg) (Max) @ Vgs:7a3a518cab03bd94fd4df91d14d076fd
Vgs (Max):ed5450af4f622d5d61945c0592c793a8
Input Capacitance (Ciss) (Max) @ Vds:4491a6e55dcaa8da1669a01d20214d0b
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):6ceb14a6a136f3b1b5228f4ed05f6683
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cdbfc7f87dda2b41686a11d9db7bf62e
Package / Case:51bf93173785f0f3fc2d8b70cf119689
In Stock: 0
Stock:
0 Can Ship Immediately
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